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| STC8550S Low Voltage High Current Radios in Class B Push-pull Operation. * Complimentary to STC8050S * Collector Current: IC=0.8A * Collector Power Dissipation: PC=0.7W (TC=25C) 1 TO-92 PNP Silicon Transistor 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Ratings -40 -40 -6 -0.8 0.7 150 -65 ~ 150 Units V V V A W C C Electrical Characteristics Ta=25C unless otherwise noted Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 hFE3 VCE (sat) VBE (sat) VBE (on) Cob fT Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Test Condition IC= -100A, IE=0 IC= -2mA, IB=0 IE= -100A, IC=0 VCB= -15V, IE=0 VEB= -6V, IC=0 VCE= -1V, IC= -5mA VCE= -1V, IC= -50mA VCE= -1V, IC= -500mA IC= -500mA, IB= -50mA IC= -500mA, IB= -50mA VCE= -1V, IC= -10mA VCB= -10V, IE=0 f=1MHz VCE= -10V, IC= -50mA 100 45 85 40 170 400 100 -0.28 -0.98 -0.66 15 200 -0.5 -1.2 -1.0 V V V pF MHz Min. -40 -40 -6 -50 -50 Typ. Max. Units V V V nA nA Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter on Voltage Output Capacitance Current Gain Bandwidth Product hFEClassification Classification hFE2 A 85 ~ 160 B 120 ~ 200 C 200 ~ 400 Typical Characteristics STC8550S -0.5 1000 VCE = -1V IB=-4.0mA IC[mA], COLLECTOR CURRENT -0.4 IB=-3.5mA IB=-3.0mA hFE, DC CURRENT GAIN 100 -0.3 IB=-2.5mA IB=-2.0mA -0.2 IB=-1.5mA IB=-1.0mA 10 -0.1 IB=-0.5mA -0.4 -0.8 -1.2 -1.6 -2.0 1 -0.1 -1 -10 -100 -1000 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain -10000 -100 VBE(sat), VCE(sat)[V], SATURATION VOLTAGE IC=10IB VCE = -1V -1000 IC[mA], COLLECTOR CURRENT -100 -1000 -10 VBE(sat) -100 -1 VCE(sat) -10 -0.1 -1 -10 -0.1 -0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 IC[mA], COLLECTOR CURRENT VBE[V], BASE-EMITTER VOLTAGE Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage 100 fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT 1000 f=1MHz IE=0 VCE=-10V Cob[pF], CAPACITANCE 10 100 1 -1 -10 -100 -1000 10 -1 -10 -100 -1000 VCB[V], COLLECTOR-BASE VOLTAGE IC[mA], COLLECTOR CURRENT Figure 5. Collector Output Capacitance Figure 6. Current Gain Bandwidth Product |
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